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Evidence for complexes of hydrogen with deep-level defects in bulk III-V materials

โœ Scribed by Clerjaud, B.; Cte, D.; Naud, C.


Book ID
123614369
Publisher
The American Physical Society
Year
1987
Tongue
English
Weight
181 KB
Volume
58
Category
Article
ISSN
0031-9007

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Deep-level transient spectroscopy has been employed for monitoring grown-in point defects in vapour phase epitaxial GaAs06P0.4:Te and GaP:N,S. It is shown that the concentrations of deep electron traps T1 (0.20 eV) and T2 (0.18 eV) in GaA%.tP0.4:Te are dependent on the shallow donor concentration an