One more deep level related to the metastable hydrogen-related defects in n-GaAs epilayers

✍ Scribed by O.A. Soltanovich; E.B. Yakimov; E.V. Erofeev; V.A. Kagadei; J. Weber

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 236 KB
• Volume: 404
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2009.08.220

✦ Synopsis

A deep trap with energy level at E C -0.45 eV is detected in n-type GaAs epilayers after hydrogenation. This level exhibits a bias-dependent annealing behaviour in the temperature range 290-400 K. The relation of this defect to the well-known metastable hydrogen-related M3/M4 defect is discussed.