𝔖 Bobbio Scriptorium
✦   LIBER   ✦

On chemical etching of structural defects in epitaxial GaAs1-xPx and bulk GaAs

✍ Scribed by Rosin, H.


Publisher
John Wiley and Sons
Year
1974
Tongue
English
Weight
276 KB
Volume
25
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Determination of Composition and Inhomog
✍ M. Somogyi; Á. Barna πŸ“‚ Article πŸ“… 1974 πŸ› John Wiley and Sons 🌐 English βš– 143 KB

## Abstract A method is given for the rapid determination of the composition and the carrier concentration in GaAs~1βˆ’x~P~x~ epitaxial layers. The composition was determined from the photoresponse of the Schottky‐barriers. A calibration curve was constructed using the absolute composition data deter

On the kinetics of GaAs chemical transpo
✍ L. Hitova; A. Lenchev; E. P. Trifonova; M. Apostolova πŸ“‚ Article πŸ“… 1994 πŸ› John Wiley and Sons 🌐 English βš– 352 KB πŸ‘ 2 views

## On the Kinetics of GaAs Chemical Transport and Epitaxy in the System GaAs-11, Kinetic analysis of experimental data on transport and epitaxial growth of GaAs with iodine in closed and in open tube systems has been carried out. The uniformly shrinking core model has been applied to study GaAs tr