On chemical etching of structural defects in epitaxial GaAs1-xPx and bulk GaAs
β Scribed by Rosin, H.
- Publisher
- John Wiley and Sons
- Year
- 1974
- Tongue
- English
- Weight
- 276 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0031-8965
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π SIMILAR VOLUMES
## Abstract A method is given for the rapid determination of the composition and the carrier concentration in GaAs~1βx~P~x~ epitaxial layers. The composition was determined from the photoresponse of the Schottkyβbarriers. A calibration curve was constructed using the absolute composition data deter
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