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Effect of Halo structure variations on the threshold voltage of a 22nm gate length NMOS transistor

โœ Scribed by Afifah Maheran, A.H.; Menon, P.S.; Ahmad, I.; Shaari, S.


Book ID
122307021
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
745 KB
Volume
17
Category
Article
ISSN
1369-8001

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Effect of degas before metal gate deposi
โœ J. Pรฉtry; K. Xiong; L.-A. Ragnarsson; R. Singanamalla; J. Hooker ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 357 KB

The interaction between the dielectric and the metal gates is crucial for effective workfunction and V T . In this work, we investigate the effect of a degas step just before the metal gate deposition. The purpose of this step is to remove the water adsorbed at the surface of the dielectric by heati