✦ LIBER ✦
Modeling the fringing electric field effect on the threshold voltage of FD SOI nMOS devices with the LDD/sidewall oxide spacer structure
✍ Scribed by Lin, S.C.; Kuo, J.B.
- Book ID
- 114617219
- Publisher
- IEEE
- Year
- 2003
- Tongue
- English
- Weight
- 449 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0018-9383
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