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Effect of free surface and interface on thermal annealing of dislocation loops in silicon

โœ Scribed by Narayan, J.; Jagannadham, K.


Book ID
119967739
Publisher
American Institute of Physics
Year
1987
Tongue
English
Weight
651 KB
Volume
62
Category
Article
ISSN
0021-8979

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Thin foils of quenched aluminium have been annealed at hydrostatic pressures up to 60 kb and temperatures up to 289ยฐC. Observation by transmission electron microscopy before and after treatment has enabled a determination of temperature ranges within which dislocation loops anneal out at different p