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Influence of the annealing ambient on the relative thermal stability of dislocation loops in silicon

✍ Scribed by F Cristiano; B Colombeau; J Grisolia; B de Mauduit; F Giles; M Omri; D Skarlatos; D Tsoukalas; A Claverie

Book ID
114164807
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
151 KB
Volume
178
Category
Article
ISSN
0168-583X

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πŸ“œ SIMILAR VOLUMES

On the stability of quenched dislocation
On the stability of quenched dislocation loops in aluminum
✍ G. Saada πŸ“‚ Article πŸ“… 1962 πŸ› Elsevier Science βš– 248 KB

than are actually observed. In addition the model requires that reflections of the type (OO..!} should remain sharp and reflections of the type (hk.0) should become broadened.

The effect of pressure on the annealing
The effect of pressure on the annealing of dislocation loops in aluminium
✍ D.I.R Norris πŸ“‚ Article πŸ“… 1966 πŸ› Elsevier Science βš– 732 KB

Thin foils of quenched aluminium have been annealed at hydrostatic pressures up to 60 kb and temperatures up to 289Β°C. Observation by transmission electron microscopy before and after treatment has enabled a determination of temperature ranges within which dislocation loops anneal out at different p