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On the role of dislocation loops in silicon light emitting diodes

✍ Scribed by Lourenço, M. A.; Milosavljević, M.; Gwilliam, R. M.; Homewood, K. P.; Shao, G.

Book ID
121086026
Publisher
American Institute of Physics
Year
2005
Tongue
English
Weight
429 KB
Volume
87
Category
Article
ISSN
0003-6951

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## Abstract We investigated correlation between concentration of deep level defects at dislocations, detected by deep level transient spectroscopy (DLTS) and the efficiency of dislocation related luminescence in Si samples with dislocation density of about (3–5) × 10^8^ cm^–2^. We show that signifi