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Room-temperature silicon light-emitting diodes based on dislocation luminescence

✍ Scribed by Kveder, V.; Badylevich, M.; Steinman, E.; Izotov, A.; Seibt, M.; Schröter, W.

Book ID
120255095
Publisher
American Institute of Physics
Year
2004
Tongue
English
Weight
499 KB
Volume
84
Category
Article
ISSN
0003-6951

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✍ Kveder, V. ;Badylevich, M. ;Schröter, W. ;Seibt, M. ;Steinman, E. ;Izotov, A. 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 159 KB

## Abstract We investigated correlation between concentration of deep level defects at dislocations, detected by deep level transient spectroscopy (DLTS) and the efficiency of dislocation related luminescence in Si samples with dislocation density of about (3–5) × 10^8^ cm^–2^. We show that signifi