Effect of excitons on the absorption in the solar-cell with AlGaAs/GaAs superlattice grown by molecular beam epitaxy
โ Scribed by A. Kawaharazuka; K. Onomitsu; J. Nishinaga; Y. Horikoshi
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 296 KB
- Volume
- 323
- Category
- Article
- ISSN
- 0022-0248
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โฆ Synopsis
We investigate the effect of excitons on the photo-absorption in the solar-cell with AlGaAs/GaAs superlattice active layer. Absorption spectrum measured at room temperature is analyzed by using numerical simulation. Experimentally obtained spectrum is well explained by the simulation taking the excitonic effect into account. The photo-absorption is enhanced by excitons especially near the absorption edge due to the discrete bound exciton states as well as unbound continuous sates. This result clearly indicates that the excitonic absorption is effective in the superlattice even at room temperature. Superlattice active layer enhances the absorption efficiency of solar-cells and very useful for device applications.
๐ SIMILAR VOLUMES
The effects of growth conditions on the size and density of self-assembled InAlAs/AlGaAs quantum dots (QDs) grown on GaAs by molecular beam epitaxy (MBE) were studied with an emphasis on their use for single QD spectroscopy. The effects of substrate temperature and growth rate on the density and siz