๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

EFFECT OF EXCITATION WAVELENGTH ON THE RAMAN SPECTRUM OF HEXAGONAL DEFECTS IN 4H-SiC

โœ Scribed by HAN, RU; FAN, XIAOYA

Book ID
120460320
Publisher
World Scientific Publishing Company
Year
2013
Tongue
English
Weight
226 KB
Volume
27
Category
Article
ISSN
0217-9849

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

An effect of concentration and excitatio
An effect of concentration and excitation wavelength on the emission spectrum of pyrene monomer
โœ E. Loewenthal; Y. Tomkiewicz; A. Weinreb ๐Ÿ“‚ Article ๐Ÿ“… 1968 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 175 KB

The influence of excitation wavelength on the intensity distribution among the fluorescence peaks of pyrene in solid solution in methylcyclohexane is investigated. A strong dependence of this effect on pyrene concentration is noted. The observed effect is interpreted to be due to the dependence of i

Effect of changing incident wavelength o
Effect of changing incident wavelength on Raman features of optical phonons in SiC nanorods and TaC nanowires
โœ Yan Yan; Shu-Lin Zhang; Shoushan Fan; Weiqiang Han; Guomen Meng; Lide Zhang ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 131 KB

Novel Raman scattering in polar semiconductor SiC and TaC one-dimensional materials have been carried out. With increasing incident laser wavelength from 488 to 633 nm there is a huge difference in Raman intensity enhancement for the LO/IF peaks and the TO peak. This has been interpreted as due to F