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Effect of changing incident wavelength on Raman features of optical phonons in SiC nanorods and TaC nanowires

✍ Scribed by Yan Yan; Shu-Lin Zhang; Shoushan Fan; Weiqiang Han; Guomen Meng; Lide Zhang


Book ID
104166116
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
131 KB
Volume
126
Category
Article
ISSN
0038-1098

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✦ Synopsis


Novel Raman scattering in polar semiconductor SiC and TaC one-dimensional materials have been carried out. With increasing incident laser wavelength from 488 to 633 nm there is a huge difference in Raman intensity enhancement for the LO/IF peaks and the TO peak. This has been interpreted as due to Fro ¨hlich interaction and abundant defects in polar nano-scale semiconductor materials.