Effect of ethanol on optical and electrical parameters of porous silicon
✍ Scribed by V. V. Bolotov; Yu. A. Sten’kin; V. E. Roslikov; V. E. Kang; I. V. Ponomareva; S. N. Nesov
- Book ID
- 111444384
- Publisher
- Springer
- Year
- 2009
- Tongue
- English
- Weight
- 150 KB
- Volume
- 43
- Category
- Article
- ISSN
- 1063-7826
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Changes of dc conductivity for the porous silicon (PS) with different morphology and different pictures of the depleted areas after the irradiation with high-energy electrons (2 MeV, 2 Â 10 16 to 1 Â 10 17 cm ± ±2 ) are presented. PS layers of 5±60% porosity were formed by anodization of n-type Si (
Silicon-on insulator (SOI) wafers, consisting of 22 lm thick p-type silicon epitaxial layer grown on 280 lm thick n-type (1 1 1) silicon substrate, were electrochemically etched in hydrofluoric acid (HF) to produce porous silicon (PS) samples. The pores of different size and different depth were obt