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Effect of doping on the temperature coefficient of resistance of polysilicon films

โœ Scribed by A. A. Kovalevskii; A. V. Dolbik; S. N. Voitekh


Book ID
110214299
Publisher
Springer
Year
2007
Tongue
English
Weight
141 KB
Volume
36
Category
Article
ISSN
1063-7397

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On temperature coefficient of resistance
โœ Emil V. Jelenkovic; Milan M. Jevtic; K.Y. Tong; G.K.H. Pang; W.Y. Cheung; Shrawa ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 401 KB

Silicon-germanium films, doped with boron, were deposited on oxidised silicon substrates by RF magnetron sputtering. The post-deposition dopant activation and film crystallisation was done by annealing in the temperature range from 580 to 900 1C. The structural changes in the silicon-germanium films