On temperature coefficient of resistance of boron-doped SiGe films deposited by sputtering

✍ Scribed by Emil V. Jelenkovic; Milan M. Jevtic; K.Y. Tong; G.K.H. Pang; W.Y. Cheung; Shrawan K. Jha

• Book ID: 103846614
• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 401 KB
• Volume: 10
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/j.mssp.2007.08.001

✦ Synopsis

Silicon-germanium films, doped with boron, were deposited on oxidised silicon substrates by RF magnetron sputtering. The post-deposition dopant activation and film crystallisation was done by annealing in the temperature range from 580 to 900 1C. The structural changes in the silicon-germanium films caused by the presence of boron and annealing were investigated by high-resolution transmission electron microscopy. The temperature coefficient of resistance (TCR) was characterised in the temperature range from room temperature to 210 1C and correlated to the nano-structure of the films. The TCR values were explained by the contribution of different scattering mechanisms and confirmed by low-frequency noise measurement. Very low values of TCR can be obtained by selecting appropriate boron content and post-deposition annealing conditions.