Effect of deposition temperature on the microstructure and dielectric properties of Ba0.6Sr0.4TiO3thin film deposited by radio-frequency magnetron sputtering

✍ Scribed by Feng, Zuyong ;Chen, Wei ;Tan, Ooi Kiang

• Publisher: John Wiley and Sons
• Year: 2009
• Tongue: English
• Weight: 322 KB
• Volume: 206
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200925045

✦ Synopsis

Abstract

Ba~0.6~Sr~0.4~TiO~3~ (BST) thin films with the thickness of 300 nm were deposited on Pt/SiO~2~/Si substrates at various deposition temperatures by RF magnetron sputtering technique, and their electric properties were investigated. Due to the high temperature annealing process at substrate temperature of 600 °C, well‐crystallized BST film was deposited. The dielectric constant and dielectric loss of the film deposited at 600 °C are 300 and 0.033 at 100 kHz, respectively. Due to the good crystallinity of the BST films deposited by RF magnetron sputtering, high dielectric tunability up to 39.2% is achieved at a low applied voltage of 5 V. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)