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Effect of carrier confinement on photoluminescence from modulation-doped Al[sub x]Ga[sub 1−x]N/GaN heterostructures

✍ Scribed by Shen, B.; Someya, T.; Moriwaki, O.; Arakawa, Y.

Book ID: 127262533
Publisher: American Institute of Physics
Year: 2000
Tongue: English
Weight: 232 KB
Volume: 76
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.125859

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