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Weak antilocalization in a polarization-doped Al[sub x]Ga[sub 1−x]N∕GaN heterostructure with single subband occupation

✍ Scribed by Thillosen, N.; Schäpers, Th.; Kaluza, N.; Hardtdegen, H.; Guzenko, V. A.

Book ID: 127065736
Publisher: American Institute of Physics
Year: 2006
Tongue: English
Weight: 521 KB
Volume: 88
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2162871

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