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Effect of carbon on the minority carrier lifetime in heat-treated oxygen-containing silicon

โœ Scribed by Glinchuk, K. D. ;Litovchenko, N. M. ;Salnik, Z. A. ;Skryl, S. I. ;Troshin, A. L.

Publisher
John Wiley and Sons
Year
1985
Tongue
English
Weight
189 KB
Volume
87
Category
Article
ISSN
0031-8965

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Effect of nitrogen doping on the minorit
Effect of nitrogen doping on the minority carrier lifetime in Czochralski silicon
โœ Can Cui; Deren Yang; Xuegong Yu; Xiangyang Ma; Liben Li; Duanlin Que ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 121 KB

The effect of nitrogen doping on the minority carrier lifetime in Czochralski silicon (CZ-Si) passivated in dry O at different temperatures was studied. It was found that the most effective passivation temperature of 2 nitrogen-doped CZ silicon (NCZ-Si) wafers was 1000 8C, the same as that of CZ-Si