Effect of Heat Treatment on the Minority Carrier Lifetime in Oxygen-Containing Silicon
โ Scribed by Glinchuk, K. D. ;Litovchenko, N. M. ;Salnik, Z. A. ;Skryl, S. I.
- Publisher
- John Wiley and Sons
- Year
- 1983
- Tongue
- English
- Weight
- 263 KB
- Volume
- 79
- Category
- Article
- ISSN
- 0031-8965
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๐ SIMILAR VOLUMES
The effect of nitrogen doping on the minority carrier lifetime in Czochralski silicon (CZ-Si) passivated in dry O at different temperatures was studied. It was found that the most effective passivation temperature of 2 nitrogen-doped CZ silicon (NCZ-Si) wafers was 1000 8C, the same as that of CZ-Si
The problem of electron capture by impurities is mathematically similar to that of the absorption of thermal neutrons in a pile. This problem has been treated in detail; for example, Elements of Nuclear Reactor Theory by Glasstoe and Edlund, p. 266.