𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Effect of dislocations on minority carrier lifetime in germanium

✍ Scribed by S.S. Kulin; A.D. Kurtz

Publisher
Elsevier Science
Year
1954
Weight
317 KB
Volume
2
Category
Article
ISSN
0001-6160

No coin nor oath required. For personal study only.

✦ Synopsis

The problem of electron capture by impurities is mathematically similar to that of the absorption of thermal neutrons in a pile. This problem has been treated in detail; for example, Elements of Nuclear Reactor Theory by Glasstoe and Edlund, p. 266.

πŸ“œ SIMILAR VOLUMES

The effect of dislocations on diffusion
The effect of dislocations on diffusion in germanium
✍ L.A Heldt; J.N Hobstetter πŸ“‚ Article πŸ“… 1963 πŸ› Elsevier Science βš– 488 KB

## Diffusivities of antimony and indium have been measured in specially deformed germanium specimens. The diffusivity of antimony has been measured (1) parallel to a high density array of parallel edge dislocations, (2) perpendicular to this array, and (3) in low dislocation, non-deformed material.

On the Reasons Leading to an Appearance
On the Reasons Leading to an Appearance of Correlated and Anticorrelated Dependences of the Minority Carrier Lifetime on the Dislocation Density in Undoped Semi-Insulating β€œStoichiometric” GaAs Crystals
✍ Dr.; Prof. K. D. Glinchuk; Dr.; Prof. A. V. Prokhorovich πŸ“‚ Article πŸ“… 1995 πŸ› John Wiley and Sons 🌐 English βš– 227 KB πŸ‘ 2 views

It is shown that in undoped semi-insulating GaAs crystals grown under the stoichiometric conditions both correlated and anticorrelated dependences of the minority carrier lifetime T on the dislocation density Nd could be observed. The above-pointed effect is connected with a slight excess of Ga atom