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Effect of boron-doping on the growth rate of atmospheric pressure chemical vapour deposition of Si

✍ Scribed by Detlev Grützmacher

Book ID
108342547
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
631 KB
Volume
182
Category
Article
ISSN
0022-0248

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Atmospheric pressure chemical vapour deposition of fluorine-doped tin(IV) oxide from fluoroalkyltin precursors
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13 , n = 1) have been synthesized, characterized by 1 H, 13 C, 19 F and 119 Sn NMR, and evaluated as precursors for the atmospheric pressure chemical vapour deposition of fluorine-doped SnO 2 thin films. All precursors were sufficiently volatile in the range 84-136 • C and glass substrate temperatur