Atmospheric pressure chemical vapour deposition of fluorine-doped tin(IV) oxide from fluoroalkyltin precursors

✍ Scribed by Joanne E. Stanley; Anthony C. Swain; Kieran C. Molloy; David W. H. Rankin; Heather E. Robertson; Blair F. Johnston

• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 251 KB
• Volume: 19
• Category: Article
• ISSN: 0268-2605
• DOI: 10.1002/aoc.721

✦ Synopsis

13 , n = 1) have been synthesized, characterized by 1 H, 13 C, 19 F and 119 Sn NMR, and evaluated as precursors for the atmospheric pressure chemical vapour deposition of fluorine-doped SnO 2 thin films. All precursors were sufficiently volatile in the range 84-136 • C and glass substrate temperatures of ca 550 • C to yield high-quality films with ca 0.79-2.02% fluorine incorporation, save for Bu 3 SnC 6 F 13 , which incorporated <0.05% fluorine. Films were characterized by X-ray diffraction, scanning electron microscopy, thickness, haze, emissivity, and sheet resistance. The fastest growth rates and highest quality films were obtained from Et 3 SnC 4 F 9 . An electron diffraction study of Me 3 SnC 4 F 9 revealed four conformations, of which only the two of lowest abundance showed close F• • • Sn contacts that could plausibly be associated with halogen transfer to tin, and in each case it was fluorine attached to either the γ -or δ-carbon atoms of the R f chain.