The changes in the mobility and carrier concentration in annealed modulation doping Si/Si 0.8 Ge 0.2 heterostructures with various channel thicknesses have been studied and mobility-limiting mechanisms were clarified. The dominant scattering mechanism was found to change to scattering due to uniform
β¦ LIBER β¦
Effect of annealing temperature for Si0.8Ge0.2 epitaxial thin films
β Scribed by Yuan-Ming Chang; Ching-Liang Dai; Tsung-Chieh Cheng; Che-Wei Hsu
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 580 KB
- Volume
- 254
- Category
- Article
- ISSN
- 0169-4332
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