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Effect of annealing temperature for Si0.8Ge0.2 epitaxial thin films

✍ Scribed by Yuan-Ming Chang; Ching-Liang Dai; Tsung-Chieh Cheng; Che-Wei Hsu


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
580 KB
Volume
254
Category
Article
ISSN
0169-4332

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The changes in the mobility and carrier concentration in annealed modulation doping Si/Si 0.8 Ge 0.2 heterostructures with various channel thicknesses have been studied and mobility-limiting mechanisms were clarified. The dominant scattering mechanism was found to change to scattering due to uniform

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