✦ LIBER ✦
Thin epitaxial Si films as a passivation method for Ge(1 0 0): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality
✍ Scribed by F.E. Leys; R. Bonzom; B. Kaczer; T. Janssens; W. Vandervorst; B. De Jaeger; J. Van Steenbergen; K. Martens; D. Hellin; J. Rip; G. Dilliway; A. Delabie; P. Zimmerman; M. Houssa; A. Theuwis; R. Loo; M. Meuris; M. Caymax; M.M. Heyns
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 378 KB
- Volume
- 9
- Category
- Article
- ISSN
- 1369-8001
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