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Effect of annealing conditions on the formation of low-dose SIMOX structures implanted at 190 keV

✍ Scribed by Yan Tan; B. Johnson; Supapan Seraphin; Jun Jiao; M. J. Anc; L. P. Allen


Book ID
110313358
Publisher
Springer US
Year
2001
Tongue
English
Weight
882 KB
Volume
12
Category
Article
ISSN
0957-4522

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