✦ LIBER ✦
Effect ofin situphotoexcitation ofn-type Si as a result of ion implantation at low doses on the formation of radiation defects
✍ Scribed by M. Yu. Barabanenkov; A. V. Leonov; V. N. Mordkovich; N. M. Omel’yanovskaya
- Book ID
- 110120244
- Publisher
- Springer
- Year
- 1999
- Tongue
- English
- Weight
- 74 KB
- Volume
- 33
- Category
- Article
- ISSN
- 1063-7826
No coin nor oath required. For personal study only.