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Effect of ammonia plasma treatment on plasma deposited silicon nitride films/silicon interface characteristics

โœ Scribed by Arai, Hitoshi


Book ID
125452993
Publisher
AVS (American Vacuum Society)
Year
1988
Tongue
English
Weight
600 KB
Volume
6
Category
Article
ISSN
0734-211X

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Plasma-enhanced chemical vapour deposite
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Silicon nitride (SiNx) films of varying stoichiometry (x= 1.04, 1.39 and 1.63) were deposited on silicon substrates at 250 ยฐC by plasma-enhanced chemical vapour deposition (PECVD). The N/Si ratios were determined by electron spectroscopy for chemical analysis (ESCA) and Rutherford backscattering (RB