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EBIC Investigastion of the Electrical Activity of Dislocations with Different Impurity Atmospheres in Si

✍ Scribed by Bondarenko, I. E. ;Yakimov, E. B.

Publisher
John Wiley and Sons
Year
1990
Tongue
English
Weight
483 KB
Volume
122
Category
Article
ISSN
0031-8965

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πŸ“œ SIMILAR VOLUMES

A theoretical interpretation of the elec
A theoretical interpretation of the electrical behaviour of individual edge dislocations in Si as determined by combined EBIC/TEM studies
✍ Dr. A. Ourmazd πŸ“‚ Article πŸ“… 1981 πŸ› John Wiley and Sons 🌐 English βš– 493 KB

## Abstract The EBIC data obtained from individual edge and Frank partial dislocations ^i^n Si, and described in other publications, are related to defect parameters, such as the capture cross‐section for minority carriers, which determine electrical recombination properties of dislocations. A two

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Annealing effect on the electrical activity of extended defects in plastically deformed p-Si with low dislocation density
✍ Feklisova, O. V. ;Pichaud, B. ;Yakimov, E. B. πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 159 KB

## Abstract It is shown that after plastic deformation in clean conditions the most efficient recombination defects in Si are dislocation trails. The DLTS spectrum associated with the defects in the dislocation trails in p‐Si are revealed. The thermal annealing effect on the electrical properties o