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The effect of thermal treatment on the electrical activity and mobility of dislocations in Si

✍ Scribed by Bondarenko, I. E. ;Eremenko, V. G. ;Nikitenko, V. I. ;Yakimov, E. B.

Publisher: John Wiley and Sons
Year: 1980
Tongue: English
Weight: 635 KB
Volume: 60
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2210600202

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## Abstract It is shown that after plastic deformation in clean conditions the most efficient recombination defects in Si are dislocation trails. The DLTS spectrum associated with the defects in the dislocation trails in p‐Si are revealed. The thermal annealing effect on the electrical properties o