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Early voltage in double heterojunction bipolar transistors

✍ Scribed by Jahan, M.M.; Anwar, A.F.M.

Book ID: 114536340
Publisher: IEEE
Year: 1995
Tongue: English
Weight: 199 KB
Volume: 42
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.469414

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## Abstract In this paper, we present a model for double heterojunction bipolar transistors (DHBTs) that takes into account Fermi–Dirac statistics as well as an arbitrary injection level. The most commonly used models in the literature for heterojunction bipolar transistors (HBTs), bipolar junction