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Early stages of low temperature epitaxial growth of InSb on GaAs

✍ Scribed by A. Borowska; J. Gutek; R. Czajka; M. Oszwaldowski; A. Richter

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
188 KB
Volume
40
Category
Article
ISSN
0232-1300

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A-oriented GaAs substrates by flash evaporation in the substrate temperature range Tsub = 570 ... 870 K. Epitaxialgrowth begins at Tsub = 645 K. The films had always the chalcopyrite structure. Indications to a transition from the chalcopyrite phase to the sphalerite phase were observed at Tsub = 87