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A study of the Growth-Temperature-dependent Surface Morphology in InSb Liquid Phase Epitaxy

โœ Scribed by L. B. Chang


Publisher
John Wiley and Sons
Year
1991
Tongue
English
Weight
327 KB
Volume
26
Category
Article
ISSN
0232-1300

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โœฆ Synopsis


InSb LPE layers were grown on (1 11) InSb substrates, their phase diagram and growth rates studied. The InSb activity coefficient a(T), determined by fitting the experimental data, had a value of 2556-11.11 . T cal . mole-'. The terraces on the surface were reduced by increasing the temperature to 350 "C. Hall measurements of InSb/CdTe heterostructure failed due to the high Te segregation. The carrier concentration of these InSb epilayers, however, was determined by C-V measurements with values between 7.5. l O I 4 and 5 . 10'' ~m -~.


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