Dual-transistor method to determine threshold-voltage shifts due to oxide-trapped charge and interface traps in metal-oxide-semiconductor devices

✍ Scribed by Fleetwood, D. M.

• Book ID: 120524522
• Publisher: American Institute of Physics
• Year: 1989
• Tongue: English
• Weight: 554 KB
• Volume: 55
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.101854