✦ LIBER ✦
Current-conduction and charge trapping properties due to bulk nitrogen in HfO[sub x]N[sub y] gate dielectric of metal-oxide-semiconductor devices
✍ Scribed by Cheng, Chin-Lung; Chang-Liao, Kuei-Shu; Huang, Ching-Hung; Wang, Tien-Ko
- Book ID
- 120459475
- Publisher
- American Institute of Physics
- Year
- 2005
- Tongue
- English
- Weight
- 280 KB
- Volume
- 86
- Category
- Article
- ISSN
- 0003-6951
No coin nor oath required. For personal study only.