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Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

✍ Scribed by Ravindran, Vinod; Boucherit, Mohamed; Soltani, Ali; Gautier, Simon; Moudakir, Tarik; Dickerson, Jeramy; Voss, Paul L.; di Forte-Poisson, Marie-Antoinette; De Jaeger, Jean-Claude; Ougazzaden, Abdallah

Book ID: 118119164
Publisher: American Institute of Physics
Year: 2012
Tongue: English
Weight: 525 KB
Volume: 100
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.4729154

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