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Dry etching process for bulk finFET manufacturing

โœ Scribed by D. Shamiryan; A. Redolfi; W. Boullart


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
351 KB
Volume
86
Category
Article
ISSN
0167-9317

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Dry etch processes for optoelectronic de
โœ Roy Szweda ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 584 KB

In Issue 5, 2ooo we looked at the technical and business trends in etch processes for manufacturing gallium arsenide electronic devices. Here we turn to the application of dry etching to fabrication of optoelectronic devices -a much broader area (covering GaAs, lnP as well as GaN and II-Vl materials