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Dry etching of zinc-oxide and indium-zinc-oxide in IBr and BI3 plasma chemistries

✍ Scribed by W.T. Lim; L. Stafford; Ju-Il Song; Jae-Soung Park; Y.W. Heo; Joon-Hyung Lee; Jeong-Joo Kim; S.J. Pearton

Book ID
108060070
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
857 KB
Volume
253
Category
Article
ISSN
0169-4332

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## Gallium indium zinc oxide High density plasma etching HBr/Ar Oxide thin film transistor Gallium indium zinc oxide (GIZO) thin films patterned with a photoresist (PR) were dry etched using inductively coupled plasma (ICP) of HBr/Ar gas. The etch rate of the GIZO films and the etch selectivity of