β Scribed by RONALD A. POWELL (Eds.)
No coin nor oath required. For personal study only.
This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book is the inclusion of an extensive literature review of dry processing, compiled by search of computerized data bases. A subject index allows ready access to the key points raised in each of the chapters
Content:
Front Matter
Page iii
Copyright page
Page iv
Introduction to the Series
Page v
Franklin F.Y. WANG
Previous Volumes in the Series
Page vi
Preface to Volume 4
Pages vii-ix
Ronald A. POWELL
Advisory Board
Page x
CHAPTER 1 - Plasma-Assisted Etching of Aluminum and Aluminum Alloys
Pages 1-38
DENNIS W. HESS, RICHARD H. BRUCE
CHAPTER 2 - Plasma Etching of Refractory Gates of Metals, Silicides and Nitrides
Pages 39-77
T. PAUL CHOW, A.N. SAXENA, L.M. EPHRATH, R.S. BENNETT
CHAPTER 3 - Dry Etching of Group III-Group V Compound Semiconductors
Pages 79-112
RANDOLPH H. BURTON, RICHARD A. GOTTSCHO, GERALD SMOLINSKY
CHAPTER 4 - Reactive Ion Beam Etching
Pages 113-214
R.A. POWELL, D.F. DOWNEY
CHAPTER 5 - Dry Etching for Microelectronics-A Bibliography
Pages 215-294
L.C. MOLIERI
Subject Index
Pages 295-299
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