Dry etching damage of silicon: A review
โ Scribed by Gottlieb S. Oehrlein
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 906 KB
- Volume
- 4
- Category
- Article
- ISSN
- 0921-5107
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Damage as a result of ion bombardment may occur both at top surfaces and at sidewalls. We propose a method of probing sidewall damage using coherent electron focusing. A collimated electron beam is reflected off an internal boundary formed by dry etching. Spectra measured in an applied magnetic fiel
The development of new gases for dry etching is important if submicron device geometries are to be realized. Gases which are currently in use for the various proce~\_\_sing steps associated with device fabrication include CF4, CF4/O2, SF6, CC14, and to a lesser extent NFa. It is this gas, NF3, which