𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Doping of silicon clusters

✍ Scribed by Karl Jug; Matthias Krack; Hans-Jürgen Nolte

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
406 KB
Volume
184
Category
Article
ISSN
0009-2614

No coin nor oath required. For personal study only.

✦ Synopsis

The influence of doping with acceptor atoms boron and aluminum and donor atoms nitrogen and phosphorus on silicon clusters as a model for semiconductors is investigated by semiempirical calculations with the MO method SINDO 1. The series XSi.,, XSi16, XS& and XSi3, is compared for X =Si, B, Al, N, Pas the central atom on the restricted open-shell Hartree-Fock level. The trends in geometries, ionization potentials, binding energies per atom and average atomic valence numben are presented. From these results, it is concluded that the doping of free silicon clusters does not reflect doping in solid silicon. The chemical properties of these clusters are mainly determined by the dangling bonds at the surface, rather than by the central doping atom.

📜 SIMILAR VOLUMES

Doping of saturated silicon clusters
Doping of saturated silicon clusters
✍ Matthias Krack; Thomas Bredow; Karl Jug 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 368 KB

The effect of the doping of silicon is studied with model clusters YSi4Xl2 and YSi34X36 for Y = Si, B, N, AI and P and pseudoatoms X which serve to saturate the structures. SINDO1 calculations are performed at the ROHF level. From the trend for the valence of the central atom Y for the cationic, neu

Study of aluminum-doped silicon clusters
Study of aluminum-doped silicon clusters
✍ Shi-chang Zhan; Bao-xing Li; Jian-song Yang 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 297 KB

Using full-muffin-tin-orbital molecular-dynamics (FP-LMTO-MD) method, we have investigated the effect of aluminum heteroatoms on the geometric structures and bond characteristics of Si n (n ¼ 5-10) clusters in detail. It is found that the geometric framework of the ground state structures for Si n (

Production and characterization of boron
Production and characterization of boron- and silicon-doped carbon clusters
✍ Takumi Kimura; Toshiki Sugai; Hisanori Shinohara 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 366 KB

Boron-and silicon-doped carbon clusters of the type BmC . (m = 1-4) and Si,,C, (m = 1, 2) have been produced via the laser-vaporization cluster beam technique. The observed features of the intensity distribution in mass spectra suggest that B atoms can be incorporated into the clusters with much hig

Doping of epitaxial silicon
Doping of epitaxial silicon
✍ D.T.J. Hurle; R.M. Logan; R.F.C. Farrow 📂 Article 📅 1972 🏛 Elsevier Science 🌐 English ⚖ 230 KB