Study of aluminum-doped silicon clusters
β Scribed by Shi-chang Zhan; Bao-xing Li; Jian-song Yang
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 297 KB
- Volume
- 387
- Category
- Article
- ISSN
- 0921-4526
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β¦ Synopsis
Using full-muffin-tin-orbital molecular-dynamics (FP-LMTO-MD) method, we have investigated the effect of aluminum heteroatoms on the geometric structures and bond characteristics of Si n (n ΒΌ 5-10) clusters in detail. It is found that the geometric framework of the ground state structures for Si n (n ΒΌ 5-10) clusters change to some extent upon the substitution of Al atoms in some Si atoms. The effect of aluminum doping on the silicon clusters depends on the geometric structures of Si n (n ΒΌ 5-10) clusters. In particular, the calculations suggest that the aluminum doping would improve the bond strength of some Si-Si bonds in the mixed Si nΓm Al m clusters.
π SIMILAR VOLUMES
The influence of doping with acceptor atoms boron and aluminum and donor atoms nitrogen and phosphorus on silicon clusters as a model for semiconductors is investigated by semiempirical calculations with the MO method SINDO 1. The series XSi.,, XSi16, XS& and XSi3, is compared for X =Si, B, Al, N, P
The effect of the doping of silicon is studied with model clusters YSi4Xl2 and YSi34X36 for Y = Si, B, N, AI and P and pseudoatoms X which serve to saturate the structures. SINDO1 calculations are performed at the ROHF level. From the trend for the valence of the central atom Y for the cationic, neu
Small Sin and Al, clusters (n = 3-10) were studied with the semiempirical molecular orbital method (MO) method SINDO1. For each n, various structures were optimized to determine the most stable structure. To obtain good qualitative agreement with available ab initio calculations d orbitals had to be