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Doping of epitaxial silicon: Equilibrium gas phase and doping mechanism

✍ Scribed by P. Rai-Choudhury; E.I. Salkovitz


Publisher
Elsevier Science
Year
1970
Tongue
English
Weight
723 KB
Volume
7
Category
Article
ISSN
0022-0248

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Doping of Silicon Epitaxial Layers With
✍ Dr. H. Krause πŸ“‚ Article πŸ“… 1969 πŸ› John Wiley and Sons 🌐 English βš– 370 KB

## Doping of Silicon Epitaxial Layers with Arsenic at very High Concentrations Silicon epitaxial layers grown from reduction of SiCl, in H, have been highly doped with arsenic. As an upper limit of doping for layers without structural defects typical to high doping a value of about 2 . 1019 (3111-