The influence of p-dopants (Mg and Be) on the structure of GaN has been studied using Transmission Electron Microscopy (TEM). Bulk GaN : Mg and GaN : Be crystals grown by a high pressure and high temperature process and GaN : Mg grown by metal-organic chemical-vapor deposition (MOCVD) have been stud
Dopants and defects in GaN
✍ Scribed by Jörg Neugebauer; Chris G Van de Walle
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 197 KB
- Volume
- 93
- Category
- Article
- ISSN
- 0038-1098
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