𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Luminescence from defects in GaN

✍ Scribed by M.A. Reshchikov; H. Morkoç

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
163 KB
Volume
376-377
Category
Article
ISSN
0921-4526

No coin nor oath required. For personal study only.

✦ Synopsis

We briefly review the luminescence properties of defects in GaN and focus on the most interesting defects. In particular, the blue luminescence band peaking at about 3 eV is assigned to different defects and even different types of transitions in undoped, Zn-, C-, and Mg-doped GaN. Another omnipresent luminescence band, the yellow luminescence band may have different origin in nearly dislocationfree freestanding GaN templates, undoped thin layers, and carbon-doped GaN. The Y 4 and Y 7 lines are caused by recombination at unidentified point defects captured by threading edge dislocations.

📜 SIMILAR VOLUMES

Luminescence in GaN
Luminescence in GaN
✍ J.I. Pankove 📂 Article 📅 1973 🏛 Elsevier Science 🌐 English ⚖ 758 KB
Defect influence on luminescence efficie
Defect influence on luminescence efficiency of GaN-based LEDs
✍ Shuping Li; Zhilai Fang; Hangyang Chen; Jinchai Li; Xiaohong Chen; Xiaoli Yuan; 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 143 KB

Wafers with normal light-emitting diode structure were grown by metal organic chemical vapor deposition system. The pressure and temperature were varied during growth of buffer layer in order to grow different types of epilayers. The cathodoluminescence results show that the interface distortion of

Defects in GaN Nanowires
Defects in GaN Nanowires
✍ D. Tham; C.-Y. Nam; J. E. Fischer 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 390 KB
Dopants and defects in GaN
Dopants and defects in GaN
✍ Jörg Neugebauer; Chris G Van de Walle 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 197 KB
Unstable luminescence in GaN and ZnO
Unstable luminescence in GaN and ZnO
✍ M.A. Reshchikov; Y.T. Moon; X. Gu; B. Nemeth; J. Nause; H. Morkoç 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 234 KB