✦ LIBER ✦

Defect influence on luminescence efficiency of GaN-based LEDs

✍ Scribed by Shuping Li; Zhilai Fang; Hangyang Chen; Jinchai Li; Xiaohong Chen; Xiaoli Yuan; Takashi Sekiguchi; Qiming Wang; Junyong Kang

Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 143 KB
Volume: 9
Category: Article
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2006.01.019

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✦ Synopsis

Wafers with normal light-emitting diode structure were grown by metal organic chemical vapor deposition system. The pressure and temperature were varied during growth of buffer layer in order to grow different types of epilayers. The cathodoluminescence results show that the interface distortion of quantum well plays an important role in radiant efficiency. The electroluminescence detections indicate that the dislocations also influence the external quantum efficiency by lowering the electron injection efficiency.

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