𝔖 Bobbio Scriptorium
✦   LIBER   ✦

“Antisite” incorporation of Sb dopant in GaN

✍ Scribed by U.V. Desnica; N. Ravi; H. Andreasen; H. de Waard

Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
294 KB
Volume
60
Category
Article
ISSN
0038-1098

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Optical signatures of dopants in GaN
Optical signatures of dopants in GaN
✍ B. Monemar; P.P. Paskov; J.P. Bergman; A.A. Toropov; T.V. Shubina; S. Figge; T. 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 193 KB

The characteristic optical spectra for shallow donors and acceptors in GaN are discussed. The most accurate photoluminescence (PL) data are obtained from samples grown on freestanding GaN substrates, where strain shifts are absent and a low spectroscopic line width is obtained. Recent PL data for ex

Local p-type conductivity in n-GaN and n
Local p-type conductivity in n-GaN and n-ZnO layers due to inhomogeneous dopant incorporation
✍ A. Krtschil; D.C. Look; Z.-Q. Fang; A. Dadgar; A. Diez; A. Krost 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 234 KB

We report on scanning capacitance microscopy (SCM) investigations of Fe-doped GaN and nitrogen-doped ZnO layers. Macroscopically, these samples electrically behave in conventional I-V and C-V measurements like semi-insulating or n-type material, respectively. However, in SCM we found local p-type re

Influence of Dopants on Defect Formation
Influence of Dopants on Defect Formation in GaN
✍ Z. Liliental-Weber; J. Jasinski; M. Benamara; I. Grzegory; S. Porowski; D.J.H. L 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 250 KB 👁 2 views

The influence of p-dopants (Mg and Be) on the structure of GaN has been studied using Transmission Electron Microscopy (TEM). Bulk GaN : Mg and GaN : Be crystals grown by a high pressure and high temperature process and GaN : Mg grown by metal-organic chemical-vapor deposition (MOCVD) have been stud