Implantation and redistribution of dopants and isolation species in GaN and related compounds
β Scribed by R.G. Wilson; C.B. Vartuli; C.R. Abernathy; S.J. Pearton; J.M. Zavada
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 454 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0038-1101
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Photoluminescence (PL), photoluminescence excitation (PLE) spectra and luminescence decay of the Er 3+ 4 I 13/2 β 4 I 15/2 transition are investigated at 7 K in Er-implanted GaN samples. Under below-gap excitation, PL and PLE spectra reveal the existence of two types of Er centers. One type of Er ce
The influence of p-dopants (Mg and Be) on the structure of GaN has been studied using Transmission Electron Microscopy (TEM). Bulk GaN : Mg and GaN : Be crystals grown by a high pressure and high temperature process and GaN : Mg grown by metal-organic chemical-vapor deposition (MOCVD) have been stud