๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Dopant based electron beam lithography in CuxTiSe2

โœ Scribed by T.E. Kidd; D. Klein; T.A. Rash; L.H. Strauss

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
884 KB
Volume
257
Category
Article
ISSN
0169-4332

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Resist debris formation in electron beam
Resist debris formation in electron beam lithography
โœ P.R. Deshmukh; K.J. Rangra; O.P. Wadhawan ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 978 KB

The resist debris (RD) formation dependence on beam stepping to beam size ratio in electron beam lithography (EBL) is theoretically and experimentally investigated. The theoretically simulated results show a distinct variation in RD formation as the beam stepping to beam size ratio is varied from 0.

Charging effect reduction in electron be
Charging effect reduction in electron beam lithography with nA beam current
โœ Jian Zhang; Mina Fouad; Mustafa Yavuz; Bo Cui ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 509 KB

Charging effect becomes a more serious issue when performing electron beam lithography using high beam current. Here we studied the charging effect using PMMA, PMGI and ZEP-520A resist to pattern 200 nm period hole array. It is found that charging effect can be reduced by simply re-arranging the exp