The evolution of oxygen precipitates (OPs) created at 900-1000 K in Si-Cz with initial oxygen concentration 8 × 1017 cm -3 was studied by DLTS technique. The samples were subjected to high pressure (HP) treatment up to 1.3 GPa at high temperature (HT, 1230-1550 K) which caused a partial dissolution
✦ LIBER ✦
DLTS study of the oxygen dimer formation kinetics in silicon
✍ Scribed by Nikolai Yarykin; Jörg Weber
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 264 KB
- Volume
- 404
- Category
- Article
- ISSN
- 0921-4526
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